Invention Grant
- Patent Title: Insulator, capacitor with the same and fabrication method thereof, and method for fabricating semiconductor device
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Application No.: US14752016Application Date: 2015-06-26
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Publication No.: US10199214B2Publication Date: 2019-02-05
- Inventor: Kwan-Soo Kim , Soon-Wook Kim
- Applicant: Magnachip Semiconductor, Ltd.
- Applicant Address: KR Cheongju-si
- Assignee: MagnaChip Semiconductor, Ltd.
- Current Assignee: MagnaChip Semiconductor, Ltd.
- Current Assignee Address: KR Cheongju-si
- Agency: NSIP Law
- Priority: KR10-2008-0100228 20081013
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L21/02 ; H01L21/768 ; H01L23/538 ; H01L21/3213 ; H01L23/528 ; H01L21/311 ; H01L21/285 ; H01L23/532 ; H01L21/314 ; H01L49/02 ; B32B37/02 ; H01G4/33
Abstract:
Disclosed is a multilayer insulator, a metal-insulator-metal (MIM) capacitor with the same, and a fabricating method thereof. The capacitor includes: a first electrode; an insulator disposed on the first electrode, the insulator including: a laminate structure in which an aluminum oxide (Al2O3) layer and a hafnium oxide (HfO2) layer are laminated alternately in an iterative manner and a bottom layer and a top layer are formed of the same material; and a second electrode disposed on the insulator.
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Information query
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