Invention Grant
- Patent Title: Tungsten nitride barrier layer deposition
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Application No.: US15640068Application Date: 2017-06-30
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Publication No.: US10199267B2Publication Date: 2019-02-05
- Inventor: Rohit Khare , Jasmine Lin , Anand Chandrashekar
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Weaver Austin Villeneuve & Sampson LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L27/108
Abstract:
Provided herein are methods of tungsten nitride (WN) deposition. Also provided are stacks for tungsten (W) contacts to silicon germanium (SiGe) layers and methods for forming them. The stacks include SiGe/tungsten silicide (WSix)/WN/W layers, with WSix providing an ohmic contact between the SiGe and WN layers. Also provided are methods for reducing fluorine (F) attack of underlying layers in deposition of W-containing films using tungsten hexafluoride (WF6). Apparatuses to perform the methods are also provided.
Public/Granted literature
- US20190006226A1 TUNGSTEN NITRIDE BARRIER LAYER DEPOSITION Public/Granted day:2019-01-03
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