Invention Grant
- Patent Title: Semiconductor structure and fabrication method thereof
-
Application No.: US15828190Application Date: 2017-11-30
-
Publication No.: US10199297B2Publication Date: 2019-02-05
- Inventor: Chun Song , Yi Zhong
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- Applicant Address: CN Shanghai CN Beijing
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- Current Assignee Address: CN Shanghai CN Beijing
- Agency: Anova Law Group, PLLC
- Priority: CN201611110242 20161202
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/10 ; H01L23/58 ; H01L21/70 ; H01L23/045 ; H01L23/051 ; H01L23/00 ; H01L25/065 ; H01L25/07 ; H01L25/10 ; H01L25/16 ; H01L25/18

Abstract:
Semiconductor structures and fabrication methods thereof are provided. An exemplary semiconductor structure includes a semiconductor substrate having a device region and a protective region around the device region; a seal ring structure on the semiconductor substrate in the protective region; an electrical interconnect structure on the semiconductor substrate in the device region; an interlayer dielectric layer entirely covering the protective region on the seal ring structure and the electrical interconnect structure; a solder pad electrically connected with the electrical interconnect structure passing through a portion of the interlayer dielectric layer in the device region; a passivation layer on the interlayer dielectric layer and exposing the solder pad; and a conducive wire connected to the solder pad and across over a portion of the passivation layer in the protective region.
Public/Granted literature
- US20180158744A1 SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF Public/Granted day:2018-06-07
Information query
IPC分类: