Invention Grant
- Patent Title: Semiconductor structure with sacrificial anode and method for forming
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Application No.: US15215037Application Date: 2016-07-20
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Publication No.: US10199339B2Publication Date: 2019-02-05
- Inventor: Sheila F. Chopin , Min Ding , Varughese Mathew , Scott S. Roth
- Applicant: FREESCALE SEMICONDUCTOR, INC.
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/31

Abstract:
A packaged semiconductor device is made by forming a conductive pad on an external surface of an integrated circuit device, forming a passivation layer over the conductive pad, removing a portion of the passivation layer over a bond area on the conductive pad, forming a sacrificial anode around a majority of a periphery surrounding the bond area, forming a conductive bond in the bond area, and forming an encapsulating material around the conductive bond and an exposed portion of the sacrificial anode.
Public/Granted literature
- US20160329288A1 Semiconductor Structure With Sacrificial Anode and Method for Forming Public/Granted day:2016-11-10
Information query
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