Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15376543Application Date: 2016-12-12
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Publication No.: US10199347B2Publication Date: 2019-02-05
- Inventor: Tomohiro Nishimura
- Applicant: Fuji Electric Co., Ltd.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kanagawa
- Agency: Chen Yoshimura LLP
- Priority: JP2016-010826 20160122
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/373 ; H01L25/18 ; H01L29/16 ; H01L29/20 ; H01L29/78 ; H01L29/872 ; H01L25/07 ; H01L23/498

Abstract:
A semiconductor device includes a semiconductor chip having a source electrode on the front surface thereof, a diode that has an anode electrode on the front surface thereof, and a first conductive member through which output signals from the source electrode pass. The semiconductor device further includes a first wiring member that electrically connects the source electrode and the first conductive member, and a second wiring member that electrically connects the anode electrode and the first conductive member and that has a wider surface area than the first wiring member. The semiconductor device includes a second conductive member where the semiconductor chip and the diode are arranged.
Public/Granted literature
- US20170213806A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-07-27
Information query
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