Invention Grant
- Patent Title: Semiconductor module
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Application No.: US15887424Application Date: 2018-02-02
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Publication No.: US10199365B2Publication Date: 2019-02-05
- Inventor: Akiya Kimura , Tomohiro Iguchi , Akihiro Sasaki
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2017-021893 20170209
- Main IPC: H01L23/492
- IPC: H01L23/492 ; H01L25/18 ; H01L23/367 ; H01L23/00 ; H01L25/00 ; H01L23/485 ; H01L25/07 ; H01L23/42 ; H01L23/50 ; H01L23/482

Abstract:
According to one embodiment, a semiconductor module includes a first circuit component, a first connection member, and a first wire. The first circuit component includes a first substrate, a first conductive layer, a first switching device, and a first diode. The first substrate has an insulation property. The first connection member is provided on a first electrode of the first switching device and the fourth electrode of the first diode, and has a conductive property. The first wire connects the first conductive layer and the first connection member.
Public/Granted literature
- US20180226389A1 SEMICONDUCTOR MODULE Public/Granted day:2018-08-09
Information query
IPC分类: