Monolithic integrated device having an architecture that allows an acoustic device to transduce either surface acoustic waves or bulk acoustic waves, comprising: a substrate layer being the base of the device; an inter-layer dielectric disposed on top of the substrate layer; an electronic circuitry substantially formed in the inter-layer dielectric and supported by the substrate layer, the electronic circuitry comprises a plurality of metal layers; and a piezoelectric layer being sandwiched between a top electrode and a bottom electrode within the inter-layer dielectric. The top electrode is an upper metal layer belonging to the electronic circuitry and the bottom electrode is a lower metal layer belonging to the electronic circuitry. To transduce the bulk acoustic waves, the inter-layer dielectric is formed with a top cavity above the top electrode and a bottom cavity below the bottom electrode.