A silicon carbide semiconductor device includes a silicon carbide drift layer formed on an upper surface of a silicon carbide semiconductor substrate having an off angle, a body region, a source region, a plurality of trenches, a gate insulating film, a gate electrode, a source electrode, a drain electrode, and a depletion suppressing layer. The depletion suppressing layer is positioned to be sandwiched between the plurality of trenches in a plan view, and in a direction with the off angle of the silicon carbide semiconductor substrate, a distance between the depletion suppressing layer and one of the trenches adjacent to the depletion suppressing layer is different from another distance between the depletion suppressing layer and the other one of the trenches adjacent to the depletion suppressing layer.