Superjunction with surrounding lightly doped drain region

Invention Grant

US10199459B2 Superjunction with surrounding lightly doped drain region 有权

Patent Title: Superjunction with surrounding lightly doped drain region
Application No.: US15080807

Application Date: 2016-03-25
Publication No.: US10199459B2

Publication Date: 2019-02-05
Inventor: Patrick M. Shea , Samuel J. Anderson , David N. Okada
Applicant: Great Wall Semiconductor Corporation
Applicant Address: US AZ Tempe
Assignee: Great Wall Semiconductor Corporation
Current Assignee: Great Wall Semiconductor Corporation
Current Assignee Address: US AZ Tempe
Agency: Foley & Lardner LLP
Main IPC: H01L21/336
IPC: H01L21/336 ; H01L29/06 ; H01L29/40 ; H01L29/66 ; H01L29/78 ; H01L29/417

Abstract:

A semiconductor device has a substrate and a lightly doped drain (LDD) region formed in the substrate. A superjunction is formed in the LDD region.

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/334	....制造单极型器件的台阶式工艺
H01L21/335	.....场效应晶体管
H01L21/336	......带有绝缘栅的