Invention Grant
- Patent Title: Methods for forming semiconductor devices, semiconductor devices and power semiconductor devices
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Application No.: US15592804Application Date: 2017-05-11
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Publication No.: US10199468B2Publication Date: 2019-02-05
- Inventor: Michael Hutzler , Christoph Gruber
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austra AG
- Current Assignee: Infineon Technologies Austra AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102016108943 20160513
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L29/417 ; H01L29/739 ; H01L21/768 ; H01L29/78
Abstract:
A method for forming a semiconductor device includes forming a first insulation layer on a semiconductor substrate and forming a structured etch stop layer. Further, the method includes depositing a second insulation layer after forming the structured etch stop layer and forming a structured mask layer on the second insulation layer. Additionally, the method includes etching portions of the second insulation layer uncovered by the structured mask layer and portions of the first insulation layer uncovered by the structured etch stop layer to uncover at least one of a portion of the semiconductor substrate and an electrode located within a trench. Further, the method includes depositing electrically conductive material to form an electrical contact to at least one of the uncovered electrode and the uncovered portion of the semiconductor substrate.
Public/Granted literature
- US20170330941A1 Methods for Forming Semiconductor Devices, Semiconductor Devices and Power Semiconductor Devices Public/Granted day:2017-11-16
Information query
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