Invention Grant
- Patent Title: Field effect transistor having staggered field effect transistor cells
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Application No.: US15346224Application Date: 2016-11-08
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Publication No.: US10199470B2Publication Date: 2019-02-05
- Inventor: Alan J. Bielunis , Istvan Rodriguez , Christopher M. Laighton
- Applicant: Raytheon Company
- Applicant Address: US MA Waltham
- Assignee: Raytheon Company
- Current Assignee: Raytheon Company
- Current Assignee Address: US MA Waltham
- Agency: Daly, Crowley, Mofford & Durkee, LLP
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L27/02 ; H01L27/088 ; H01L29/06 ; H01L29/78 ; H01L29/423 ; H01L29/812

Abstract:
A Field Effect Transistor (FET) having a substrate; a plurality of active regions disposed on the substrate; and a laterally extending finger-like control electrode disposed on a portion of a surface of the substrate. The active regions are laterally spaced one from the other successively along the laterally extending finger-like control electrode. The laterally extending finger-like control electrode controls a flow of carriers through each one of the plurality of active regions between a source electrode and a drain electrode.
Public/Granted literature
- US20180130888A1 FIELD EFFECT TRANSISTOR HAVING STAGGERED FIELD EFFECT TRANSISTOR CELLS Public/Granted day:2018-05-10
Information query
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