Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15540823Application Date: 2016-05-26
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Publication No.: US10199483B2Publication Date: 2019-02-05
- Inventor: Ryohei Kotani , Toshiki Matsubara , Nobutaka Ishizuka , Masato Mikawa , Hiroshi Oshino
- Applicant: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- Current Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Nutter McClennen & Fish LLP
- International Application: PCT/JP2016/065645 WO 20160526
- International Announcement: WO2017/203671 WO 20171130
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L27/02 ; H01L29/40 ; H01L29/78 ; H01L29/08 ; H01L29/06 ; H01L29/866 ; H01L29/16 ; H01L29/47
Abstract:
In a semiconductor device according to an embodiment, ends of conductor portions are electrically connected to an overvoltage protection diode so that depletion occurs in a diffusion layer in a portion near an insulating film in a reverse bias application state, and/or ends of conductor portions are electrically connected to the overvoltage protection diode so that depletion occurs in a peripheral semiconductor region in a portion near the insulating film in the reverse bias application state.
Public/Granted literature
- US20180204935A1 SEMICONDUCTOR MODULE Public/Granted day:2018-07-19
Information query
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