Invention Grant
- Patent Title: Folded channel trench MOSFET
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Application No.: US15364827Application Date: 2016-11-30
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Publication No.: US10199492B2Publication Date: 2019-02-05
- Inventor: Sik Lui
- Applicant: Alpha and Omega Semiconductor Incorporated
- Applicant Address: US CA Sunnyvale
- Assignee: ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED
- Current Assignee: ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED
- Current Assignee Address: US CA Sunnyvale
- Agency: JDI Patent
- Agent Joshua Isenberg; Robert Pullman
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/266 ; H01L21/768 ; H01L23/528 ; H01L29/08 ; H01L29/10 ; H01L29/66
Abstract:
A trench MOSFET device includes a body, region and source region that undulate along a channel width direction of the MOSFET device such that the body region and source region have variations in depth along the channel width direction. The undulations increase a channel width of the MOSFET device.
Public/Granted literature
- US20180151720A1 FOLDED CHANNEL TRENCH MOSFET Public/Granted day:2018-05-31
Information query
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