Invention Grant
- Patent Title: Schottky diode including an insulating substrate and Schottky diode unit
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Application No.: US15846224Application Date: 2017-12-19
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Publication No.: US10199513B2Publication Date: 2019-02-05
- Inventor: Yu-Dan Zhao , Xiao-Yang Xiao , Ying-Cheng Wang , Yuan-Hao Jin , Tian-Fu Zhang , Qun-Qing Li
- Applicant: Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: ScienBiziP, P.C.
- Priority: CN201710049200 20170120
- Main IPC: H01L51/00
- IPC: H01L51/00 ; H01L51/05 ; H01L29/87 ; H01L27/08 ; H01L29/47 ; H01L29/49 ; H01L29/06 ; H01L29/872 ; H01L29/20 ; H01L29/16 ; H01L29/04 ; H01L29/417 ; H01L29/24 ; H01L29/786
Abstract:
A Schottky diode includes a first electrode, a second electrode and a semiconducting structure. The first electrode includes a first metal layer and a second metal layer. The second electrode includes a third metal layer and a fourth metal layer. The semiconductor structure includes a first end and a second end. The first end is sandwiched by the first metal layer and the second metal layer, the second end is sandwiched by the third metal layer and the fourth metal layer. The semiconductor structure is a nano-scale semiconductor structure.
Public/Granted literature
- US20180212070A1 SCHOTTKY DIODE Public/Granted day:2018-07-26
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