Invention Grant
- Patent Title: Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon
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Application No.: US14979285Application Date: 2015-12-22
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Publication No.: US10199529B2Publication Date: 2019-02-05
- Inventor: Praveen Chaudhari , Ashok Chaudhari
- Applicant: Karin Chaudhari , Ashok Chaudhari , Pia Chaudhari
- Applicant Address: US NY Briarcliff Manor
- Assignee: Solar-Tectic, LLC
- Current Assignee: Solar-Tectic, LLC
- Current Assignee Address: US NY Briarcliff Manor
- Agency: Carter Ledyard & Milburn LLP
- Agent Danielle C. Sullivan
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L31/18 ; C30B11/12 ; C30B29/06 ; C30B23/02 ; C30B25/02 ; C30B25/18 ; C30B19/00 ; C30B29/52

Abstract:
A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on flexible substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films are nearly to entirely free of metal impurities and have widespread application in the manufacture and benefit of photovoltaic and display technologies.
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