A light emitting diode according to an embodiment includes: a substrate; a first conductive semiconductor layer on the substrate; an active layer on the first conductive semiconductor layer; and a light emitting structure including a second conductive semiconductor layer on the active layer, wherein the active layer includes at least one quantum well layer and at least one quantum barrier layer, and each of the quantum well layers includes a plurality of well layers having different indium composition ratios, thereby improving internal quantum efficiency.