Invention Grant
- Patent Title: Light emitting diode and fabrication method thereof
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Application No.: US15853913Application Date: 2017-12-25
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Publication No.: US10199538B2Publication Date: 2019-02-05
- Inventor: Jie Zhang , Jianming Liu , Xueliang Zhu , Chen-ke Hsu
- Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Xiamen
- Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Xiamen
- Agency: Syncoda LLC
- Agent Feng Ma; Junjie Feng
- Priority: CN201510921693 20151214
- Main IPC: H01L33/14
- IPC: H01L33/14 ; H01L33/00 ; H01L33/02 ; H01L33/12 ; H01L27/15 ; H01L33/06 ; H01L33/32 ; H01L33/38 ; H01L33/46

Abstract:
A light-emitting diode includes a conductive mask layer planted over a substrate surface. An epitaxial laminated layer is formed over the conductive mask layer via epitaxial growth; and a current channel is formed over the epitaxial laminated layer; during injection, current is firstly conducted to the conductive mask layer through the current channel, and then to the epitaxial laminated layer after horizontal spreading over the conductive mask layer, which effectively improves current spreading uniformity and reduces working voltage of device. Meanwhile, the conductive mask layer reflects light to further improve extraction efficiency and light-emitting luminance.
Public/Granted literature
- US20180138364A1 Light Emitting Diode and Fabrication Method Thereof Public/Granted day:2018-05-17
Information query
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