Invention Grant
- Patent Title: Method for manufacturing niobate-system ferroelectric thin-film device
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Application No.: US15548543Application Date: 2016-01-19
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Publication No.: US10199564B2Publication Date: 2019-02-05
- Inventor: Fumimasa Horikiri , Kenji Shibata , Kazutoshi Watanabe , Kazufumi Suenaga , Masaki Noguchi , Kenji Kuroiwa
- Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED , KANTO KAGAKU KABUSHIKI KAISHA
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED,KANTO KAGAKU KABUSHIKI KAISHA
- Current Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED,KANTO KAGAKU KABUSHIKI KAISHA
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2015-020309 20150204
- International Application: PCT/JP2016/051389 WO 20160119
- International Announcement: WO2016/125579 WO 20160811
- Main IPC: H01L41/316
- IPC: H01L41/316 ; H01L41/332 ; H01L41/187 ; H01L41/113 ; C23C14/34 ; C23C14/08 ; H01L21/308
Abstract:
This method for manufacturing a lead-free niobate-system ferroelectric thin film device includes: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a niobate-system ferroelectric thin film on the lower electrode film; an etch mask pattern formation step of forming an etch mask in a desired pattern on the niobate-system ferroelectric thin film; and a ferroelectric thin film etching step of shaping the niobate-system ferroelectric thin film into a desired fine pattern by wet etching using an etchant comprising: a predetermined chelating agent including at least one selected from EDTMP, NTMP, CyDTA, HEDP, GBMP, DTPMP, and citric acid; an aqueous alkaline solution containing an aqueous ammonia solution; and an aqueous hydrogen peroxide solution.
Public/Granted literature
- US20180026176A1 METHOD FOR MANUFACTURING NIOBATE-SYSTEM FERROELECTRIC THIN-FILM DEVICE Public/Granted day:2018-01-25
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