Invention Grant
- Patent Title: Semiconductor device having magnetic tunnel junction structure and method of forming the same
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Application No.: US15220719Application Date: 2016-07-27
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Publication No.: US10199566B2Publication Date: 2019-02-05
- Inventor: Jung-Ik Oh , Jong-Kyu Kim , Jongchul Park , Gwang-Hyun Baek , Kyungrae Byun , Hyun-Woo Yang
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse P.C.
- Priority: KR10-2015-0138538 20151001
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/02 ; H01L43/08 ; H01L43/12
Abstract:
A semiconductor device includes a magnetic tunnel junction structure on a lower electrode, an intermediate electrode on the magnetic tunnel junction structure, and an upper electrode on the intermediate electrode, wherein the intermediate electrode includes a lower portion and an upper portion having a side surface profile different from that of the lower portion.
Public/Granted literature
- US20170098759A1 SEMICONDUCTOR DEVICE HAVING MAGNETIC TUNNEL JUNCTION STRUCTURE AND METHOD OF FORMING THE SAME Public/Granted day:2017-04-06
Information query
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