Invention Grant
- Patent Title: Magnetic storage device and manufacturing method of magnetic storage device
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Application No.: US15261619Application Date: 2016-09-09
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Publication No.: US10199568B2Publication Date: 2019-02-05
- Inventor: Makoto Nagamine , Young Min Eeh , Daisuke Watanabe , Kazuya Sawada , Toshihiko Nagase
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L43/12 ; H01L27/22

Abstract:
According to one embodiment, a magnetic storage device includes a substrate, a dummy contact disposed on a top surface of the substrate, extending linearly in a direction substantially perpendicular to the top surface of the substrate, and floating electrically, and a magnetoresistive effect element included in a layer and insulated from the dummy contact, wherein the layer is disposed on the top surface of the dummy contact.
Public/Granted literature
- US20170263855A1 MAGNETIC STORAGE DEVICE AND MANUFACTURING METHOD OF MAGNETIC STORAGE DEVICE Public/Granted day:2017-09-14
Information query
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