A Ga-containing and Cu-containing sputtering target has a Ga content of from 30 to 68 at %. The sputtering target contains only CuGa2 as Ga-containing and Cu-containing intermetallic phase or the proportion by volume of CuGa2 is greater than the proportion by volume of Cu9Ga4. The sputtering target is advantageously produced by spark plasma sintering or cold gas spraying. Compared to Cu9Ga4, CuGa2 is very soft, which aids the production of defect-free sputtering targets having homogeneous sputtering behavior.