A magnetic memory device includes a memory cell array, a counter circuit and a control circuit. The memory cell array includes a memory cell including a magneto resistive element in which writing is performed by current in a first direction or current in a second direction which is an opposite direction to the first direction. The memory cell array includes a first word line and a first bit line, both connected with the memory cell. The counter circuit counts the number of writing times in the first direction while the counter circuit is in electrical connection with the magneto resistive element. The control circuit performs writing in the second direction in the memory cell when the number of consecutive writing times in the first direction reaches a threshold number of times while the control circuit is in connection with the memory cell array.