- Patent Title: Method for producing substrate for semiconductor element mounting
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Application No.: US14777834Application Date: 2014-03-11
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Publication No.: US10204801B2Publication Date: 2019-02-12
- Inventor: Shigeru Hosomomi
- Applicant: OHKUCHI MATERIALS CO. LTD.
- Applicant Address: JP Kagoshima
- Assignee: OHKUCHI MATERIALS CO., LTD.
- Current Assignee: OHKUCHI MATERIALS CO., LTD.
- Current Assignee Address: JP Kagoshima
- Agency: Troutman Sanders LLP
- Priority: JP2013-056466 20130319
- International Application: PCT/JP2014/056304 WO 20140311
- International Announcement: WO2014/148308 WO 20140925
- Main IPC: H01L21/428
- IPC: H01L21/428 ; H01L21/48 ; H01L23/498 ; G03F7/20 ; G03F7/32 ; H01L21/56 ; H01L23/495

Abstract:
A process of forming, on a surface of the substrate a plurality of resist layers made of two kinds of dry film resist that differ in main peak wavelength in spectral photosensitivity. An exposure process of selectively exposing and affecting a particular resist layer in accordance with a first pattern upon using a first exposure mask overlaid on the plurality of resist layers. A second exposure process of exposing another resist layer in accordance with a second pattern upon using a second exposure mask overlaid on the plurality of resist layers. Partially uncovering the surface of the substrate by removing unexposed portions of the plurality of resist layers, to form a resist mask having an aperture. Finally, forming a coat layer by plating a portion of the substrate where the surface thereof is uncovered; and a process of removing the resist mask.
Public/Granted literature
- US20160300732A1 METHOD FOR PRODUCING SUBSTRATE FOR SEMICONDUCTOR ELEMENT MOUNTING Public/Granted day:2016-10-13
Information query
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