Invention Grant
- Patent Title: Thin film transistor and method for manufacturing the same, and display panel
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Application No.: US15324791Application Date: 2016-04-07
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Publication No.: US10204933B2Publication Date: 2019-02-12
- Inventor: Hongda Sun , Youngsuk Song , Jingang Fang
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Nath, Goldberg & Meyer
- Agent Joshua B. Goldberg
- Priority: CN201510563151 20150907
- International Application: PCT/CN2016/078671 WO 20160407
- International Announcement: WO2017/041485 WO 20170316
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/786 ; H01L29/45 ; H01L29/49 ; H01L29/66

Abstract:
The application provides a thin film transistor, a method for manufacturing the thin film transistor, and a display panel, the thin film transistor includes a metal electrode, and a step of forming the metal electrode includes: forming a first material layer on a substrate; performing a pattering process on the first material layer to form a groove pattern in the first material layer such that the groove pattern matches with a pattern of the metal electrode to be formed; forming the metal electrode in the groove pattern such that a gap is formed between an edge of the metal electrode and an edge of the groove pattern; forming a protection pattern on the substrate formed with the metal electrode such that the protection pattern covers the metal electrode and its edge. In the application, the protection pattern is formed on the resultant metal electrode and can effectively protect conductive metal.
Public/Granted literature
- US20170207248A1 THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME, AND DISPLAY PANEL Public/Granted day:2017-07-20
Information query
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