Invention Grant
- Patent Title: Semiconductor device and manufacturing method of the same
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Application No.: US15602741Application Date: 2017-05-23
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Publication No.: US10204980B2Publication Date: 2019-02-12
- Inventor: Yoshifumi Yasuda , Tatsuji Nagaoka , Yasushi Urakami , Sachiko Aoi
- Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA , DENSO CORPORATION
- Applicant Address: JP Toyota JP Kariya
- Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA,DENSO CORPORATION
- Current Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA,DENSO CORPORATION
- Current Assignee Address: JP Toyota JP Kariya
- Agency: Oliff PLC
- Priority: JP2016-139552 20160714
- Main IPC: H01L21/26
- IPC: H01L21/26 ; H01L29/06 ; H01L29/41 ; H01L29/66 ; H01L21/265 ; H01L29/417 ; H01L29/872 ; H01L29/16 ; H01L21/04 ; H01L29/739 ; H01L29/78 ; H01L29/861
Abstract:
A semiconductor device may include an element region and a peripheral voltage withstanding region. The peripheral voltage withstanding region includes inner circumferential guard rings; and outer circumferential guard rings having a width narrower than a width of the inner circumferential guard rings. An interval between the inner circumferential guard rings is narrower than an interval between the outer circumferential guard rings. Each of the inner circumferential guard rings includes a first high concentration region and a first low concentration region. Each of the outer circumferential guard rings includes a second high concentration region and a second low concentration region. A width of a part of each first low concentration region that is exposed on a front surface of the semiconductor device is wider than a width of a part of each second low concentration region that is exposed on the front surface.
Public/Granted literature
- US20180019301A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2018-01-18
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