A semiconductor device is provided, the semiconductor device including a base layer of a first conductivity type having a MOS gate structure formed on a front surface side thereof, a collector layer of a second conductivity type formed on a rear surface side of the base layer, and into which a first dopant and a second dopant which is different from the first dopant are implanted, and a collector electrode formed on a rear surface side of the collector layer, wherein an impurity concentration peak of the second dopant is at a deeper position from the rear surface of the collector layer than an impurity concentration peak of the first dopant, and magnitude of the impurity concentration peak of the second dopant is larger than 1/100 of magnitude of the impurity concentration peak of the first dopant.