- Patent Title: Method and apparatus for power device with multiple doped regions
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Application No.: US15377590Application Date: 2016-12-13
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Publication No.: US10205014B2Publication Date: 2019-02-12
- Inventor: Shang-Hui Tu , Chih-Jen Huang , Jui-Chun Chang , Shin-Cheng Lin , Yu-Hao Ho , Wen-Hsin Lin
- Applicant: Vanguard International Semiconductor Corporation
- Applicant Address: TW Hsinchu
- Assignee: Vanguard International Semiconductor Corporation
- Current Assignee: Vanguard International Semiconductor Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/10 ; H01L29/06 ; H01L29/08 ; H01L21/70 ; H01L21/265 ; H01L21/266 ; H01L29/423
Abstract:
A semiconductor device is provided. The device includes a substrate having a first conductivity type. The device further includes a drain region, a source region, and a well region disposed in the substrate. The well region is disposed between the drain region and the source region and having a second conductivity type opposite to the first conductivity type. The device further includes a plurality of doped regions disposed within the well region. The doped regions are vertically and horizontally offset from each other. Each of the doped regions includes a lower portion having the first conductivity type, and an upper portion stacked on the lower region and having the second conductivity type.
Public/Granted literature
- US20170092755A1 METHOD AND APPARATUS FOR POWER DEVICE WITH MULTIPLE DOPED REGIONS Public/Granted day:2017-03-30
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