Invention Grant
- Patent Title: Thin-film transistor, manufacturing method for the same, display panel
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Application No.: US15533013Application Date: 2017-04-10
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Publication No.: US10205028B2Publication Date: 2019-02-12
- Inventor: Longqiang Shi
- Applicant: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- Applicant Address: CN Shenzhen, Guangdong
- Assignee: Shenzhen China Star Optoelectroncis Semiconductor Display Technology Co., Ltd
- Current Assignee: Shenzhen China Star Optoelectroncis Semiconductor Display Technology Co., Ltd
- Current Assignee Address: CN Shenzhen, Guangdong
- Agent Andrew C. Cheng
- International Application: PCT/CN2017/079907 WO 20170410
- International Announcement: WO2018/166018 WO 20180920
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/786 ; H01L21/02 ; H01L21/027 ; H01L27/12 ; H01L21/4763 ; H01L29/417 ; H01L29/51 ; H01L29/66 ; H01L27/32 ; G02F1/1368
Abstract:
A thin-film transistor, a manufacturing for the same, and a display panel are provided. In the annealing process, the aluminum layer combines with oxygen ions in the amorphous oxide semiconductor layer to form an Al2O3 layer. The amorphous oxide semiconductor layer loses the oxygen ions, oxygen defects are increased such that a doped region of the semiconductor layer is formed. That is, a source contact region and a drain contact region are formed, and the amorphous oxide semiconductor layer is shielded by the anti-oxidation layer to form the channel region of the semiconductor layer. The present invention can simplify the manufacturing process, increase the production efficiency and decrease the production cost.
Public/Granted literature
- US20180269331A1 THIN-FILM TRANSISTOR, MANUFACTURING METHOD FOR THE SAME, DISPLAY PANEL Public/Granted day:2018-09-20
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