Invention Grant
- Patent Title: Semiconductor device having resistance voltage dividing circuit
-
Application No.: US15936556Application Date: 2018-03-27
-
Publication No.: US10205031B2Publication Date: 2019-02-12
- Inventor: Yukimasa Minami
- Applicant: ABLIC Inc.
- Applicant Address: JP
- Assignee: ABLIC Inc.
- Current Assignee: ABLIC Inc.
- Current Assignee Address: JP
- Agency: Adams & Wilks
- Priority: JP2017-068173 20170330
- Main IPC: H01L29/86
- IPC: H01L29/86 ; H01L29/8605 ; H01L27/08 ; H01L29/16 ; H01L29/04

Abstract:
All resistors configuring a resistance voltage dividing circuit are formed by alternately arranging an N-type polycrystalline silicon and a P-type polycrystalline silicon and connecting the same in parallel or in series. The respective resistors themselves cancel a stress received from a resin upon packaging of the resistance voltage dividing circuit since the N-type polycrystalline silicon and the P-type polycrystalline silicon respectively indicate a shift amount in a reverse direction with respect to a stress. There can hence be provided a resistance voltage dividing circuit in which a variation in voltage division ratio at packaging is reduced than before.
Public/Granted literature
- US20180286990A1 SEMICONDUCTOR DEVICE HAVING RESISTANCE VOLTAGE DIVIDING CIRCUIT Public/Granted day:2018-10-04
Information query
IPC分类: