Invention Grant
- Patent Title: Semiconductor structure and method for making same
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Application No.: US12885704Application Date: 2010-09-20
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Publication No.: US10205032B2Publication Date: 2019-02-12
- Inventor: Thoralf Kautzsch
- Applicant: Thoralf Kautzsch
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Agency: Viering, Jentschura & Partner mbB
- Main IPC: H01L21/74
- IPC: H01L21/74 ; H01L29/66 ; H01L29/94
Abstract:
One or more embodiments relate to a method of forming a semiconductor structure, comprising: providing a semiconductor substrate; forming an opening within the substrate; forming a conductive layer within the opening; and forming a semiconductor layer over the conductive layer.
Public/Granted literature
- US20120068304A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR MAKING SAME Public/Granted day:2012-03-22
Information query
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