Invention Grant
- Patent Title: III-nitride nanowire LED with strain modified surface active region and method of making thereof
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Application No.: US15861013Application Date: 2018-01-03
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Publication No.: US10205054B2Publication Date: 2019-02-12
- Inventor: Linda Romano , Ping Wang
- Applicant: GLO AB
- Applicant Address: SE Lund
- Assignee: GLO AB
- Current Assignee: GLO AB
- Current Assignee Address: SE Lund
- Agency: The Marbury Law Group PLLC
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L33/24 ; H01L33/18 ; H01L33/32 ; H01L33/00 ; H01L33/02 ; H01L33/06 ; H01L33/08 ; H01L33/12 ; H01L33/42
Abstract:
A core-shell nanowire device includes an eave region having a structural discontinuity from the p-plane in the upper tip portion of the shell to the m-plane in the lower portion of the shell. The eave region has at least 5 atomic percent higher indium content than the p-plane and m-plane portions of the shell.
Public/Granted literature
- US20180145218A1 III-Nitride Nanowire LED with Strain Modified Surface Active Region and Method of Making Thereof Public/Granted day:2018-05-24
Information query
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