Invention Grant
- Patent Title: Light emitting diode and fabrication method thereof
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Application No.: US15817216Application Date: 2017-11-19
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Publication No.: US10205061B2Publication Date: 2019-02-12
- Inventor: Huining Wang , Sheng-hsien Hsu , Kang-wei Peng , Su-hui Lin , Chen-ke Hsu
- Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Xiamen
- Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Xiamen
- Agency: Syncoda LLC
- Agent Feng Ma; Junjie Feng
- Priority: CN201610002739 20160106
- Main IPC: H01L33/42
- IPC: H01L33/42 ; H01L33/14 ; H01L33/22 ; H01L25/075 ; H01L33/00 ; H01L33/06 ; H01L33/32

Abstract:
A light-emitting diode includes from bottom to up: a substrate; a light-emitting epitaxial layer laminated by semiconductor material layers over the substrate; a current spreading layer doped with conductive metal nanomaterial groups over the light-emitting epitaxial layer; and metal nanomaterial groups with high visible light transmittance over the current spreading layer. The conductive metal nanomaterial groups dispersed inside the ITO current spreading layer can reduce horizontal resistance of the current spreading layer and improve horizontal spreading uniformity of current; and metal nanomaterial groups with high visible light transmittance are distributed over the upper surface of the current expansion layer for roughening and increasing light extract efficiency.
Public/Granted literature
- US20180102461A1 Light Emitting Diode and Fabrication Method Thereof Public/Granted day:2018-04-12
Information query
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