Invention Grant
- Patent Title: Semiconductor light emitting device including cap structure and method of making same
-
Application No.: US15826048Application Date: 2017-11-29
-
Publication No.: US10205075B2Publication Date: 2019-02-12
- Inventor: Anusha Pokhriyal , Mariana Munteanu , Fariba Danesh
- Applicant: GLO AB
- Applicant Address: SE Lund
- Assignee: GLO AB
- Current Assignee: GLO AB
- Current Assignee Address: SE Lund
- Agency: The Marbury Law Group PLLC
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/62 ; H01L33/12 ; H01L33/20 ; H01L33/32 ; H01L33/38 ; H01L33/44 ; H01L33/60 ; H01L23/00 ; H01L33/06 ; H01L33/40 ; H01L33/10

Abstract:
A light emitting device and method of forming the same, the light emitting device including: a substrate, a buffer layer disposed on the substrate, a semiconductor mesa disposed on the buffer layer and including a first semiconductor layer, a light emitting active layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the first semiconductor layer, a contact layer disposed on an upper surface of the mesa, a passivation layer covering sidewalls of the mesa and the contact layer, and a cap structure including a reflective layer covering an upper surface of the contact layer, and a solder layer including a recess in which the reflective layer is disposed.
Public/Granted literature
- US20180159005A1 SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING CAP STRUCTURE AND METHOD OF MAKING SAME Public/Granted day:2018-06-07
Information query
IPC分类: