Invention Grant
- Patent Title: Semiconductor structure and semiconductor device using the same
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Application No.: US15916390Application Date: 2018-03-09
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Publication No.: US10205098B2Publication Date: 2019-02-12
- Inventor: Jin Zhang , Yang Wei , Kai-Li Jiang , Shou-Shan Fan
- Applicant: Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: ScienBiziP, P.C.
- Priority: CN201710375318 20170524
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L31/00 ; H01L51/00 ; B82Y30/00 ; H01L21/02 ; H01L29/417 ; H01L51/44

Abstract:
A semiconductor structure includes a semiconductor layer, a carbon nanotube and a conductive film. The semiconductor layer includes a first surface and a second surface. A thickness of the semiconductor layer ranges from 1 nanometer to 100 nanometers. The carbon nanotube is located on the first surface of the semiconductor. The conductive film is located on the second surface of the semiconductor. The conductive film is formed on the second surface by a depositing method. The carbon nanotube, the semiconductor layer and the conductive film are stacked with each other to form a three-layered stereoscopic structure.
Public/Granted literature
- US20180342679A1 SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR DEVICE USING THE SAME Public/Granted day:2018-11-29
Information query
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