Invention Grant
- Patent Title: Quantum dot SOA-silicon external cavity multi-wavelength laser
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Application No.: US15802812Application Date: 2017-11-03
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Publication No.: US10205302B2Publication Date: 2019-02-12
- Inventor: Yi Zhang , Shuyu Yang , Michael J. Hochberg , Thomas Wetteland Baehr-Jones
- Applicant: Elenion Technologies, LLC
- Applicant Address: US NY New York
- Assignee: Elenion Technologies, LLC
- Current Assignee: Elenion Technologies, LLC
- Current Assignee Address: US NY New York
- Agency: Nixon Peabody LLP
- Main IPC: H01S3/10
- IPC: H01S3/10 ; H01S5/14 ; H01S5/02 ; H01S5/10 ; H01S5/40 ; H01S3/00 ; H01S5/34 ; H01S5/068 ; H01S5/343

Abstract:
A hybrid external cavity multi-wavelength laser using a QD RSOA and a silicon photonics chip is demonstrated. Four lasing modes at 2 nm spacing and less than 3 dB power non-uniformity were observed, with over 20 mW of total output power. Each lasing peak can be successfully modulated at 10 Gb/s. At 10−9 BER, the receiver power penalty is less than 2.6 dB compared to a conventional commercial laser. An expected application is the provision of a comb laser source for WDM transmission in optical interconnection systems.
Public/Granted literature
- US20180062351A1 QUANTUM DOT SOA-SILICON EXTERNAL CAVITY MULTI-WAVELENGTH LASER Public/Granted day:2018-03-01
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