Invention Grant
- Patent Title: Charge pump circuit
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Application No.: US15838181Application Date: 2017-12-11
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Publication No.: US10205387B2Publication Date: 2019-02-12
- Inventor: Wen-Chi Lin , Cheng-Ta Wu , Keng-Nan Chen
- Applicant: SILICON INTEGRATED SYSTEMS CORP.
- Applicant Address: TW Hsinchu
- Assignee: SILICON INTEGRATED SYSTEMS CORP.
- Current Assignee: SILICON INTEGRATED SYSTEMS CORP.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Priority: TW105141481A 20161214
- Main IPC: H02M3/07
- IPC: H02M3/07

Abstract:
A charge pump circuit includes N boosting circuits, (N−2) switching circuits and a control circuit. A kth boosting circuit includes a unidirectional component and a capacitor. A positive terminal of the unidirectional component of the kth boosting circuit is electrically connected to a negative terminal of a unidirectional component of a (k−1)th boosting circuit. A first terminal of the capacitor of the kth boosting circuit is electrically connected to a negative terminal of the unidirectional component of the kth boosting circuit. A (2i−1)th switching circuit selectively conducts a current path from a (2i−1)th boosting circuit to a first clock terminal or to a ground terminal according to a control signal of the control circuit. A (2i)th switching circuit selectively conducts a current path from a (2i)th boosting circuit to a second clock terminal or to the ground terminal according to the control signal of the control circuit.
Public/Granted literature
- US20180166986A1 CHARGE PUMP CIRCUIT Public/Granted day:2018-06-14
Information query
IPC分类: