An imaging device of a CMOS type having a global shutter function is downsized.In the imaging device, a photoelectric conversion unit generates charge corresponding to an exposure amount in a predetermined exposure period. A generated charge retaining unit is formed to have a predetermined impurity concentration in a semiconductor substrate and retains the charge. A generated charge transferring unit renders the photoelectric conversion unit and the generated charge retaining unit conductive therebetween after the exposure period has elapsed and transfers the charge from the photoelectric conversion unit to the generated charge retaining unit. An output charge retaining unit is formed to have substantially the same impurity concentration as that of the generated charge retaining unit and retains charge. A retained charge distributing unit renders the generated charge retaining unit and the output charge retaining unit conductive therebetween and uniformly distributes the charge retained in the generated charge retaining unit to the generated charge retaining unit and the output charge retaining unit. A signal generating unit generates a signal corresponding to the charge retained in the output charge retaining unit as an image signal after the distribution in the retained charge distributing unit.