Invention Grant
- Patent Title: Atomic layer etching processes using sequential, self-limiting thermal reactions comprising oxidation and fluorination
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Application No.: US15893054Application Date: 2018-02-09
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Publication No.: US10208383B2Publication Date: 2019-02-19
- Inventor: Steven M. George , Younghee Lee , Nicholas Johnson
- Applicant: THE REGENTS OF THE UNIVERSITY OF COLORADO, A BODY CORPORATE
- Applicant Address: US CO Denver
- Assignee: The Regents of the University of Colorado, a body corporate
- Current Assignee: The Regents of the University of Colorado, a body corporate
- Current Assignee Address: US CO Denver
- Agency: Saul Ewing Arnstein & Lehr LLP
- Agent Kathryn Doyle; Domingos J. Silva
- Main IPC: C23F4/00
- IPC: C23F4/00 ; C09K13/10 ; C09K13/00 ; C09K13/08
Abstract:
The invention includes a method of promoting atomic layer etching (ALE) of a surface. In certain embodiments, the method comprises contacting a solid substrate comprising a first metal compound with an oxidant, optionally contacting the solid substrate with a second metal compound, and then contacting the modified solid substrate with a fluorinating agent, whereby ALE of the solid substrate is promoted.
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