A semiconductor device includes: a first substrate with one side on which a sensing unit for a physical quantity is arranged and multiple diffusion wiring layers electrically connected to the sensing unit are arranged by impurity diffusion; and a second substrate having one side which is bonded to the one side of the first substrate. An air tight chamber is provided between the first substrate and the second substrate. The sensing unit is sealed in the air tight chamber. The first substrate includes an outer edge portion as a portion of the one side of the first substrate surrounding multiple diffusion wiring layers, and multiple diffusion wiring layers are arranged in an inner edge portion. The outer edge portion has an impurity concentration which is constant in a circumferential direction along an edge of the first substrate.