- Patent Title: Integrated circuit sensor device for charge detection hybridizing a lateral metal oxide semiconductor field effect transistor (MOSFET) and a vertical bipolar junction transistor (BJT)
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Application No.: US14899428Application Date: 2014-06-17
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Publication No.: US10209215B2Publication Date: 2019-02-19
- Inventor: Klas-Hakan Eklund , Shili Zhang , Ulf Smith , Hans Erik Norstrom
- Applicant: K.EKLUND INNOVATION
- Applicant Address: SE Uppsala
- Assignee: K.EKLUND INNOVATION
- Current Assignee: K.EKLUND INNOVATION
- Current Assignee Address: SE Uppsala
- Agency: Young & Thompson
- International Application: PCT/SE2014/050743 WO 20140617
- International Announcement: WO2014/204394 WO 20141224
- Main IPC: H01L27/06
- IPC: H01L27/06 ; G01N27/414
Abstract:
A semiconductor based integrated sensor device includes: a lateral insulating-gate field effect transistor (MOSFET) connected in series to the base of a vertical bipolar junction transistor (BJT) wherein the drain-drift-region of the MOSFET is part of the base-region of the BJT within the semiconductor substrate thus making electrical contact to the base of the BJT and the distance of the drain-drift-region of the MOSFET to the emitter of the BJT exceeds the vertical distance between the emitter and any buried layer, serving as collector, and the breakdown voltage of the device being determined by the BVCEO of the vertical BJT.
Public/Granted literature
- US20160153932A1 AN INTEGRATED SENSOR DEVICE FOR CHARGE DETECTION Public/Granted day:2016-06-02
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