Invention Grant
- Patent Title: Radiation detector
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Application No.: US15684303Application Date: 2017-08-23
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Publication No.: US10209371B2Publication Date: 2019-02-19
- Inventor: Isao Takasu , Satomi Taguchi , Mitsuyoshi Kobayashi , Atsushi Wada , Yuko Nomura , Keiji Sugi , Rei Hasegawa , Naoto Kume
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2016-226284 20161121
- Main IPC: G01T1/20
- IPC: G01T1/20 ; G01T1/203

Abstract:
According to one embodiment, a radiation detector includes a scintillator layer, a first conductive layer, a second conductive layer, and an organic layer. The second conductive layer is provided between the scintillator layer and the first conductive layer. The organic layer is provided between the first conductive layer and the second conductive layer. The organic layer includes an organic semiconductor region having a first thickness. The first thickness is 400 nanometers or more.
Public/Granted literature
- US20180143329A1 RADIATION DETECTOR Public/Granted day:2018-05-24
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