Invention Grant
- Patent Title: Active matrix substrate, display device and display device manufacturing method
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Application No.: US15743068Application Date: 2016-07-07
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Publication No.: US10209592B2Publication Date: 2019-02-19
- Inventor: Tohru Okabe , Hirohiko Nishiki , Takeshi Hara , Tomohiro Kosaka , Izumi Ishida , Shogo Murashige
- Applicant: SHARP KABUSHIKI KAISHA
- Applicant Address: JP Sakai, Osaka
- Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee Address: JP Sakai, Osaka
- Agency: ScienBiziP, P.C.
- Priority: JP2015-137640 20150709; JP2015-143448 20150717
- International Application: PCT/JP2016/070179 WO 20160707
- International Announcement: WO2017/007004 WO 20170112
- Main IPC: G02F1/1335
- IPC: G02F1/1335 ; G02F1/1362 ; G02F1/1333 ; G02F1/1368 ; H01L27/32 ; H01L27/12 ; H05B33/02 ; H05B33/10 ; G02F1/1343

Abstract:
An active matrix substrate includes an insulating substrate in which light-transmitting areas and a light-shielding area are formed. The active matrix substrate further includes: a light-shielding film formed in the light-shielding area on the insulating substrate, with a transparent base material containing carbon particles, the light shielding film being colored with the carbon particles; an inorganic film formed on the light-shielding film; light-transmitting films formed in the light-transmitting areas on the insulating substrate, with a transparent base material containing transparent oxidized carbon particles; gate lines provided on the inorganic film; a gate insulating film provided on the gate lines; thin film transistors provided in matrix on the gate insulating film; and data lines provided on the light-shielding film to intersect with the gate lines. The data lines are electrically connected with the thin film transistors.
Public/Granted literature
- US20180210306A1 ACTIVE MATRIX SUBSTRATE, DISPLAY DEVICE AND DISPLAY DEVICE MANUFACTURING METHOD Public/Granted day:2018-07-26
Information query
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