Invention Grant
- Patent Title: Thin film transistor array substrate, manufacturing method therefor, and display device
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Application No.: US15513172Application Date: 2016-01-06
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Publication No.: US10209594B2Publication Date: 2019-02-19
- Inventor: Wei Feng
- Applicant: BOE Technology Group Co., Ltd. , Hefei Xinsheng Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Beijing CN Hefei
- Assignee: BOE Technology Group Co., Ltd.,Hefei Xinsheng Optoelectronics Technology Co., Ltd.
- Current Assignee: BOE Technology Group Co., Ltd.,Hefei Xinsheng Optoelectronics Technology Co., Ltd.
- Current Assignee Address: CN Beijing CN Hefei
- Agency: Banner & Witcoff, Ltd.
- Priority: CN201510518773 20150821
- International Application: PCT/CN2016/070257 WO 20160106
- International Announcement: WO2017/031924 WO 20170302
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/768 ; G02F1/1368 ; G02F1/1343 ; G02F1/1362 ; H01L29/423 ; H01L29/49 ; H01L29/786

Abstract:
A thin film transistor array substrate, a manufacturing method thereof and a display device are provided, and the thin film transistor array substrate includes: a base substrate, a gate electrode disposed on the base substrate, a gate insulating layer and an active layer which are disposed on the gate electrode sequentially, and a pixel electrode, a common electrode, and a transparent electrode layer which are disposed on the base substrate; the transparent electrode layer and the pixel electrode or the common electrode are prepared in a same layer and by a same material; the transparent electrode layer is disposed under the gate insulating layer; an orthogonal projection of the active layer on the base substrate is located within a region of an orthogonal projection of the transparent electrode layer.
Public/Granted literature
- US20170307921A1 Thin Film Transistor Array Substrate, Manufacturing Method Therefor, and Display Device Public/Granted day:2017-10-26
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