Invention Grant
- Patent Title: System and method for adjusting EEPROM write cycle duration according to supply voltage variation
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Application No.: US16010268Application Date: 2018-06-15
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Publication No.: US10210933B2Publication Date: 2019-02-19
- Inventor: Francois Tailliet , Marc Battista
- Applicant: STMicroelectronics (Rousset) SAS
- Applicant Address: FR Rousset
- Assignee: STMICROELECTRONICS (ROUSSET) SAS
- Current Assignee: STMICROELECTRONICS (ROUSSET) SAS
- Current Assignee Address: FR Rousset
- Agency: Slater Matsil, LLP
- Priority: FR1559017 20150924
- Main IPC: G11C13/00
- IPC: G11C13/00 ; G11C16/10 ; G11C16/14 ; G11C16/30 ; G11C16/32 ; G11C5/14 ; G11C16/34 ; G11C29/12
Abstract:
A method of controlling a cycle for writing at least one data item to at least one memory slot of the electrically programmable and erasable read-only memory type disposed in an electronic circuit supplied by a supply voltage includes a controlled increase of the duration of the write cycle in the presence of a decrease in the supply voltage.
Public/Granted literature
- US20180294030A1 System and Method for Adjusting EEPROM Write Cycle Duration According to Supply Voltage Variation Public/Granted day:2018-10-11
Information query
