Invention Grant
- Patent Title: Metallic-magnetic-domain-wall-based nonvolatile tunable resistor for memory and sensor applications
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Application No.: US15160914Application Date: 2016-05-20
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Publication No.: US10210970B2Publication Date: 2019-02-19
- Inventor: Yue Ma , Yongtao Cui , Kentaro Ueda , Jun Fujioka , Yoshinori Tokura , Zhixun Shen , Robert B. Laughlin
- Applicant: The Board of Trustees of the Leland Stanford Junior University , RIKEN
- Applicant Address: US CA Stanford JP Saitama
- Assignee: The Board of Trustees of the Leland Stanford Junior University,RIKEN
- Current Assignee: The Board of Trustees of the Leland Stanford Junior University,RIKEN
- Current Assignee Address: US CA Stanford JP Saitama
- Agency: Lumen Patent Firm
- Main IPC: H01C1/14
- IPC: H01C1/14 ; H01L43/08 ; H01C10/10 ; H01L43/10
Abstract:
Control of electrical conductivity is provided via electrically conductive magnetic domain walls between magnetic domains. The magnetic domains are identical except for their magnetic configuration. Altering a configuration of the magnetic domains (e.g., by thermal treatment, application of a magnetic field, etc.) can alter the electrical resistance of a device. Such devices can be used as non-volatile information storage devices or as sensors.
Public/Granted literature
- US20160343481A1 Metallic-magnetic-domain-wall-based nonvolatile tunable resistor for memory and sensor applications Public/Granted day:2016-11-24
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