An interconnect structure and a method to form an interconnect structure utilizes a high-aspect ratio single-damascene line and a non-damascene via. The interconnect includes a first single-damascene interconnect line disposed in a first interlayer dielectric layer, and a non-damascene via on the first single-damascene interconnect line that may be formed from cobalt, titanium and/or tungsten. A first SiCN layer may be formed on one or more sidewalls of the non-damascene via. A second single-damascene layer may be formed on the non-damascene via in which the second single-damascene layer may be disposed in a second interlayer dielectric layer. A second SiCN layer may be formed on at least part of an upper surface of the first single-damascene layer, and a third SiCN layer may be formed on at least part of an upper surface of the second single-damascene layer.