Invention Grant
- Patent Title: Power transistor with harmonic control
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Application No.: US15674368Application Date: 2017-08-10
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Publication No.: US10211170B2Publication Date: 2019-02-19
- Inventor: Pascal Peyrot , Olivier Lembeye , Sai Sunil Mangaonkar
- Applicant: NXP USA, Inc.
- Applicant Address: US TX Austin
- Assignee: NXP USA, INC.
- Current Assignee: NXP USA, INC.
- Current Assignee Address: US TX Austin
- Priority: EP16306079 20160824
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L21/44 ; H01L21/48 ; H01L21/50 ; H01L23/66 ; H01L23/64 ; H01L23/00 ; H03F1/56 ; H03F3/195 ; H03F1/02 ; H03F3/60

Abstract:
A system and method for a packaged device with harmonic control are presented. In one embodiment, a device includes a substrate and a transistor die coupled to the substrate. The transistor die includes a plurality of transistor cells. Each transistor cell in the plurality of transistor cells includes a control (e.g., gate) terminal. The device includes a second die coupled to the substrate. The second die includes a plurality of individual shunt capacitors coupled between the control terminals of the plurality of transistor cells and a ground reference node. The capacitance values of at least two of the shunt capacitors are significantly different.
Public/Granted literature
- US20180061785A1 POWER TRANSISTOR WITH HARMONIC CONTROL Public/Granted day:2018-03-01
Information query
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