Methods of connecting a read driver transistor to a PD and PU inverter of a two-port vertical SRAM via a shared GAA or a vertical cross-couple contact between a GAA of the read driver transistor and the bottom source/drain region of the PD and PU inverter and the resulting devices are provided. Embodiments include forming a first PD transistor, a first PU transistor, a second PU transistor, and a second PD transistor over a substrate; forming a first PG transistor and a second PG transistor over the substrate; forming a read transistor and a read driver transistor laterally separated in the first direction over the substrate, the read transistor and the read driver transistor adjacent to the second PG transistor and the first PD transistor, respectively; and connecting the read driver transistor, the first PD transistor, and the first PU transistor.