Invention Grant
- Patent Title: Semiconductor device, related manufacturing method, and related electronic device
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Application No.: US14583493Application Date: 2014-12-26
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Publication No.: US10211289B2Publication Date: 2019-02-19
- Inventor: Meng Zhao
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
- Applicant Address: CN
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee Address: CN
- Agency: Innovation Counsel LLP
- Priority: CN201410025292 20140120
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L21/306 ; H01L21/02 ; H01L29/06 ; H01L29/08 ; H01L29/16 ; H01L29/78 ; H01L29/66 ; H01L29/165
Abstract:
A semiconductor device may include a semiconductor substrate. The semiconductor device may further include a gate electrode that overlaps the semiconductor substrate. The semiconductor device may further include a channel region that overlaps at least one of the gate electrode and the semiconductor substrate. The semiconductor device may further include a stress adjustment element that contacts the channel region and is positioned between the channel region and a surface of the semiconductor substrate in a direction perpendicular to the surface of the semiconductor substrate. A maximum width of the channel region in a direction parallel to the surface of the semiconductor substrate is greater than a maximum width of the stress adjustment element in the direction parallel to the surface of the semiconductor substrate in a cross-sectional view of the semiconductor device.
Public/Granted literature
- US20150206969A1 SEMICONDUCTOR DEVICE, RELATED MANUFACTURING METHOD, AND RELATED ELECTRONIC DEVICE Public/Granted day:2015-07-23
Information query
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