- Patent Title: Semiconductor device and semiconductor device manufacturing method
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Application No.: US15638409Application Date: 2017-06-30
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Publication No.: US10211299B2Publication Date: 2019-02-19
- Inventor: Tatsuya Naito
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kanagawa
- Priority: JP2015-142184 20150716
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/40 ; H01L27/06 ; H01L29/739 ; H01L29/423 ; H01L27/07 ; H01L29/06 ; H01L29/08
Abstract:
Provided is a semiconductor device including a semiconductor substrate; a gate trench portion formed in a front surface of the semiconductor substrate; a dummy trench portion formed in the front surface of the semiconductor substrate; and a first front-surface-side electrode that includes metal and is formed above the front surface of the semiconductor substrate. The gate trench portion includes a gate trench formed in the front surface of the semiconductor substrate; a gate conducting portion formed inside the gate trench; and a gate insulating portion that is formed above the gate conducting portion inside the gate trench and provides insulation between the gate conducting portion and the first front-surface-side electrode. The dummy trench portion includes a dummy trench formed in the front surface of the semiconductor substrate; and a dummy conducting portion that is formed inside the dummy trench and contacts the first front-surface-side electrode.
Public/Granted literature
- US20170317175A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2017-11-02
Information query
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